New preamorphization technique for very shallow p+-n junctions
B. Davari, E. Ganin, et al.
VLSI Technology 1989
A novel technique for the formation of sub-quarter-micron emitters using epitaxial lateral overgrowth over a thin nitride pattern followed by thermal oxidation is described. Although the nitride pattern is defined by optical lithography, emitter size and tolerance are comparable to those in electron-beam lithography. Unlike the case of conventional double-poly structures, the emitter size tolerance is not affected by dry etching through the extrinsic base polysilicon; thus, only the thin nitride film has to be etched to open the emitter window. Bipolar transistors with a base width of 90 nm have been fabricated using this selective epitaxy emitter window (SEEW) technique.
B. Davari, E. Ganin, et al.
VLSI Technology 1989
M. Soyuer, J.N. Burghartz, et al.
BCTM 1996
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993
J.H. Comfort, G.L. Patton, et al.
IEDM 1990