Conference paper
Multilevel phase-change memory
Nikolaos Papandreou, Angeliki Pantazi, et al.
ICECS 2010
There has recently been increased interest in carbon-based resistive random-access (RRAM) memory. Carbon-based RRAM has the potential to scale to atomic dimensions, resulting in ultra-high-density and low-power memory. Here we report reversible unipolar resistance switching in hydrogenated amorphous carbon. The devices used in this study are fabricated using e-beam lithography with built-in series resistors. A thorough analysis of the electrical transport and the resistance switching mechanism is presented. © 2013 IEEE.
Nikolaos Papandreou, Angeliki Pantazi, et al.
ICECS 2010
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NeSy 2023
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IP 2005
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Neuromorph. Comput. Eng.