B.N.J. Persson, J.E. Demuth
Journal of Electron Spectroscopy and Related Phenomena
The epitaxial growth of silicon on Si(111)-(7×7) and Si(001)-(2×2) substrates at temperatures between 300 and 700 K is studied using scanning tunneling microscopy. On Si(111)-(7×7), the epitaxial islands are triangular and exhibit (7×7)-like reconstructions even at low coverage. STM images show that multilayer growth initiates at boundaries between different (7×7) domains and between (5×5) and (7×7) phases. On Si(001), the epitaxial islands are highly anisotropic, forming long narrow rows only a few dimers wide. Multilayer growth initiates at (2×1) anti-phase boundaries. A model is proposed for the structure at these anti-phase boundaries. © 1989.
B.N.J. Persson, J.E. Demuth
Journal of Electron Spectroscopy and Related Phenomena
David G. Cahill, R.J. Hamers
Physical Review B
J. Schneir, R. Sonnenfeld, et al.
Journal of Applied Physics
O.L. Alerhand, A. Nihat Berker, et al.
Physical Review Letters