S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Numerical simulations are employed to demonstrate the daunting challenges involved in utilizing electrochemical polishing technologies as an alternative to low-down-force chemical mechanical planarization. Results show that small-aspect-ratio topographical features sitting on a relatively thin overburden are impossible to planarize by conventional electropolishing. Electrochemical mechanical planarization (E-CMP), where an anodic dissolution process is coupled with a polishing pad, is a more viable approach. Numerical simulations are compared to results obtained by E-CMP as a means of establishing an effective diffusion-layer thickness and as further demonstration of the infeasibility of electropolishing. © 2005 The Electrochemical Society. All rights reserved.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
T.N. Morgan
Semiconductor Science and Technology
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989