Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The reaction of copper with silicon in Cu-Si bilayers with overall compositions between copper and the most silicon-rich compound Cu3Si, was monitored by means of several analytical tools, in situ resistance measurements during controlled heating, backscattering, and X-ray diffraction. The order of phase formation was established to be first η″ Cu3Si, followed by the formation of a phase called γ, with about 17 at.% Si. With a sample of intermediate composition, one then observes the reaction of η″ with γ, resulting in the formation of the ε phase with about 20 at.% Si. The resistivity of the various phases was estimated. © 1991.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
P. Alnot, D.J. Auerbach, et al.
Surface Science
E. Burstein
Ferroelectrics