Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A grain-boundary-dislocation mechanism for diffusion-induced boundary migration is proposed. It is suggested that point-defect emission from grain-boundary dislocations is necessary for the solution and transport of substitutional solutes. Grain-boundary migration occurs as a by-product of the emission of point defects, owing to the requirement that the dislocation remain in the grain-boundary plane. © 1981 Taylor & Francis Group, LLC.
T.N. Morgan
Semiconductor Science and Technology
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989