Conference paper
Design considerations of SOI digital CMOS VLSI
C.T. Chuang
IEEE International SOI Conference 1998
A detailed study on the scaling property trench isolation capacitance for advanced high-performance bipolar applications is presented. It is shown that the trench isolation capacitance depends on the trench structure, particularly the trench bottom and the trench fill. The dependence of the trench isolation capacitance on the trench width is then analyzed for various commonly used trench structures. The impact on the scaled-down high-performance ECL circuits is presented. © 1990 IEEE
C.T. Chuang
IEEE International SOI Conference 1998
B.S. Wu, C.T. Chuang, et al.
IEEE Transactions on Electron Devices
J.H. Comfort, P.F. Lu, et al.
VLSI Technology 1990
K. Kim, K. Das, et al.
International Journal of Electronics