J.H. Stathis, R. Bolam, et al.
INFOS 2005
A review is given of experiments on the conductance of 1D MOSFET's. The types of samples studied, the phenomena observed and our theoretical understanding of these phenomena are discussed. Particular attention is given to the strong localization regime and the structure in the conductance as a function of gate voltage. © 1984.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Hiroshi Ito, Reinhold Schwalm
JES
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000