B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
We report the pressure-dependent optical absorption in the fundamental edge region of amorphous silicon prepared by sputtering and glow discharge methods. For pressures up to 20 kbar we find a negative pressure coefficient of about 1 × 10-6 eV/bar for the isoabsorption energies. In a higher range of pressure, starting with pressures of about 50 kbar, we observed irreversible red shifts in the absorption curves. © 1977 The American Physical Society.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Sung Ho Kim, Oun-Ho Park, et al.
Small
Michiel Sprik
Journal of Physics Condensed Matter