P. Alnot, D.J. Auerbach, et al.
Surface Science
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Ming L. Yu
Physical Review B
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008