John Zahurak, Agis A. Iliadis, et al.
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1992
A new form of read out for high density read-only memory is presented whereby a data density of 400 bits/μm2, corresponding to 256 Gbits/in.2, can be accessed at data rates in the tens of MHz range. The technique is based on detecting the modulation in light scattering from a sharp scattering object due to the dipole-dipole coupling between the probe and surface being scanned using a sensitive homodyne interferometer. Theoretical considerations indicate that data densities in the 100 Tbits/in.2 range could be accessed at data rates of 100 MHz using this technology. © 1997 American Institute of Physics.
John Zahurak, Agis A. Iliadis, et al.
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1992
B.D. Terris, S. Rishton, et al.
Applied Physics A: Materials Science and Processing
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Applied Physics Letters
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Proceedings of SPIE 1989