R.A. Webb, S. Washburn, et al.
Physica A: Statistical Mechanics and its Applications
We have made extensive studies of the temperature, gate voltage, and electric field dependences of the conductance peaks in small silicon inversion layers in order to distinguish between resonant-tunneling models and a hopping model. We find that many of the peaks are consistent only with a hopping model, whereas some could be consistent with an early resonant-tunneling model. None of our structure is consistent with resonant tunneling if the recent formulation of Stone and Lee is correct. © 1985 The American Physical Society.
R.A. Webb, S. Washburn, et al.
Physica A: Statistical Mechanics and its Applications
A.B. Fowler, A. Hartstein, et al.
Physical Review Letters
A.B. Fowler, A. Hartstein
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
S. Washburn, R.A. Webb, et al.
Physical Review B