S. Washburn, C.P. Umbach, et al.
Physical Review B
We have made extensive studies of the temperature, gate voltage, and electric field dependences of the conductance peaks in small silicon inversion layers in order to distinguish between resonant-tunneling models and a hopping model. We find that many of the peaks are consistent only with a hopping model, whereas some could be consistent with an early resonant-tunneling model. None of our structure is consistent with resonant tunneling if the recent formulation of Stone and Lee is correct. © 1985 The American Physical Society.
S. Washburn, C.P. Umbach, et al.
Physical Review B
F. Holtzberg, R.A. Webb, et al.
Journal of Applied Physics
A. Hartstein, A.B. Fowler
Surface Science
A. Hartstein, R.H. Koch
ICNN 1987