S.F. Feste, M. Zhang, et al.
Solid-State Electronics
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
S.F. Feste, M. Zhang, et al.
Solid-State Electronics
J. Knoch, M. Zhang, et al.
Applied Physics A: Materials Science and Processing
M. Najmzadeh, K. Boucart, et al.
Solid-State Electronics
Mikael T. Björk, K. Moselund, et al.
SNW 2010