Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
We investigated the oxidation behavior of ZrN thin films in dry O2 with the goal of possible applications of ZrN in metal/oxide/semiconductor integrated circuits. We find the oxidation process to be thermally activated with an activation energy Ea of 2.5±0.1 eV in the temperature range 475-650°C. It is suggested that the oxygen diffusing through the already-grown oxide limits the oxidation rate. X-ray analysis indicates that a mixture of monoclinic and cubic ZrO2 is formed. This mixture persists up to the highest oxidation temperatures used in this study. © 1983.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008