Conference paper
Device characteristics of high performance Cu2ZnSnS4 solar cell
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012
We provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in metal-ultrathin oxide-semiconductor heterostructures, calculating its effect upon the band bending and interfacial oxidation rates and showing good experimental agreement with the predictions. © 2007 The American Physical Society.
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012
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SENSORS 2018
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ECS Meeting 2013
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