Conference paper
Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax
S.J. Koester, R. Hammond, et al.
DRC 2000
Using high-quality jet-vapor-deposited (JVD) SiN as gate dielectric, p-type SiGe transistors are fabricated on SiGe heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD). For an 0.25-μm gate-length device, the gate leakage current is as small as 2.4 nA/mm at Vds = -1.0 V and Vgs = 0.4 V. A maximum extrinsic transconductance of 167 mS/mm is measured. A unity current gain cutoff frequency of 27 GHz and a maximum oscillation frequency of 45 GHz are obtained.
S.J. Koester, R. Hammond, et al.
DRC 2000
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
S.J. Koester, R. Hammond, et al.
IEEE Electron Device Letters
R. Hammond, S.J. Koester, et al.
DRC 1999