Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review

Marshall I. Nathan

doi:10.1016/0038-1101(86)90035-3

Solid-State Electronics

Paper

01 Jan 1986

Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review

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Abstract

The phenomenon of persistent photoconductivity in AlGaAs/GaAs modulation-doped layers and transistors is reviewed. Experimental observations, mechanisms which are responsible for it and structures for its elimination are discussed. © 1986.

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