William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Paper
Photochemical hole-burning in excited vibrational states of the S1←S0 transitīon of frēe-base porphin in an n-octane crystal
Abstract
Photochemical hole-burning was used to study vibronic relaxation in the S1←S0 transition of H2P in n-octane at 4.2 K. Vibronic lines up to 1600 cm-1 above the origin were measured. The holewidths differ strongly and do not appear to be correlated with the excess in energy above the 0-0 transition. © 1979.
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