D.N. McIlroy, D. Heskett, et al.
Physical Review B
A saturation surface photovoltage is found to occur during ultraviolet photoemission at low temperatures (T20 K) on a variety of silicon (111) surfaces. Below 50 K surface recombination becomes ineffective thereby allowing flat-band conditions to be achieved with mild uv irradiation. Temperature-dependent photoemission thereby provides a simple and direct method for determining band bending and barrier heights. Results for different silicon (111) surfaces and preparation conditions are discussed. © 1986 The American Physical Society.
D.N. McIlroy, D. Heskett, et al.
Physical Review B
Robert Hamers, J.E. Demuth
Physical Review Letters
J.E. Demuth, H. Ibach, et al.
Physical Review Letters
J.E. Demuth, P.M. Marcus, et al.
Physical Review B