Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
An As-stabilized Al0.7Ga0.3As(100) surface grown by molecular-beam epitaxy was studied using photoemission techniques. Core-level shifts and relative emission intensities at the surface were used to deduce the surface structure. High-energy-electron-diffraction and surface-contamination-rate measurements were also made. The results indicate that this surface is very similar to the As-stabilized GaAs(100)-c (2×8) surface in structure with complete depletion of Al at the surface. © 1982 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Robert W. Keyes
Physical Review B
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Small
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Macromolecules