Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

G. Northrop; J.F. Morar; D.J. Wolford; J.A. Bradley

doi:10.1116/1.586178

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Paper

01 Jul 1992

Photoluminescence from pseudomorphic Si_1-xGe_x quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

View publication

Abstract

Near-edge photoluminescence (PL) from quantum wells (QWs) has been observed. QW emission variations are measured under applied hydrostatic pressure. It is found that strong emission comes from X1-band edge.

Talk

Super resolving spatial-temporal weather predictions using Deep Learning

Workshop paper

Monitoring the Impact of Wildfires on Tree Species with Deep Learning

Paper

Unraveling the origin of the long fluorescence decay component of cesium lead halide perovskite nanocrystals

Paper

P-Type molecular doping by charge transfer in halide perovskite

View all publications

Abstract

Related

Super resolving spatial-temporal weather predictions using Deep Learning

Monitoring the Impact of Wildfires on Tree Species with Deep Learning

Unraveling the origin of the long fluorescence decay component of cesium lead halide perovskite nanocrystals

P-Type molecular doping by charge transfer in halide perovskite