Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

G. Northrop; J.F. Morar; D.J. Wolford; J.A. Bradley

doi:10.1116/1.586178

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Paper

01 Jul 1992

Photoluminescence from pseudomorphic Si_1-xGe_x quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

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Abstract

Near-edge photoluminescence (PL) from quantum wells (QWs) has been observed. QW emission variations are measured under applied hydrostatic pressure. It is found that strong emission comes from X1-band edge.

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