Eloisa Bentivegna
Big Data 2022
Defects introduced by reactive-ion etching (RIE) and plasma etching (PE) using deuterium have been studied in boron-doped silicon with the photoluminescence (PL) technique. We have observed a set of broad luminescence bands in the below-bandgap range between 1.05 and 0.8 eV. These bands change in intensity as well as in photon energy with annealing. We attribute all these PL bands to electron-hole recombination in heavily damaged regions, where electrons and holes can be localized in potential wells caused by the strain surrounding the microscopic hydrogen defects. © 1989.
Eloisa Bentivegna
Big Data 2022
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Physical Review B