Kurt D. Fredrickson, Agham B. Posadas, et al.
Journal of Applied Physics
We demonstrate metal-gate-induced interfacial layer (IL) scaling using a HfO2 dielectric and clarify the kinetics underlying this process. The intrinsic IL scaling effect on electron mobility is separated from La and Al-induced dipole effects. We find that the mobility degradation for La-containing high- κ dielectrics is not due to the La-induced dipole but due to the intrinsic IL scaling effect, whereas the Al-induced dipole brings about additional mobility degradation. This unique nature of the La-induced dipole enables aggressive equivalent oxide thickness scaling down to 0.42 nm without extrinsic mobility degradation when combined with IL scaling. © 2010 American Institute of Physics.
Kurt D. Fredrickson, Agham B. Posadas, et al.
Journal of Applied Physics
I. Geppert, M. Eizenberg, et al.
Journal of Applied Physics
Supratik Guha, Vijay Narayanan, et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Yanning Sun, Amlan Majumdar, et al.
IEDM 2014