A. Grill, V.V. Patel
JES
Paper
Porosity in plasma enhanced chemical vapor deposited SiCoH dielectrics: A comparative study
Abstract
The study of porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics was presented. It was found that the SiCOH films with k = 2.8 had no detectable porosity. It was shown that the pore size increases with decreasing k, however the diameter remains below 5 nm for k = 2.05, most of the pores being smaller than 2.5 nm.
Related
K. Barmak, C. Cabral, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
P. Asoka-Kumar, K. O'Brien, et al.
Applied Physics Letters
K.P. Rodbell, V. Svilan, et al.
MRS Spring Meeting 1996