T. Schneider, E. Stoll
Physical Review B
We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pb1 defects appear to have the same capture cross-section.
T. Schneider, E. Stoll
Physical Review B
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Ming L. Yu
Physical Review B