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IEEE T-ED
Efficient red-emitting GaP diodes have been fabricated from p-on-n layers formed by liquid epitaxy in a closed-tube system. The external quantum efficiency may increase by a factor of two to three after the diodes are heat-treated. © 1968 The American Institute of Physics.
J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
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