Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Here, a facile route to fabricate thin ferroelectric polyvinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend films with very low surface roughness based on spin-coating and subsequent melt-quenching is described. Amorphous PMMA in a blend film effectively retards the rapid crystallization of PVDF upon quenching, giving rise to a thin and flat ferroelectric film with nanometer scale β-type PVDF crystals. The still, flat interfaces of the blend film with metal electrode and/or an organic semiconducting channel layer enable fabrication of a highly reliable ferroelectric capacitor and transistor memory unit operating at voltages as low as 15 V. For instance, with a TIPS-pentacene single crystal as an active semi-conducting layer, a flexible ferroelectric field effect transistor shows a clockwise I-V hysteresis with a drain current bistability of 103 and data retention time of more than 15h at ±15 V gate voltage. Furthermore, the robust interfacial homogeneity of the ferroelectric film is highly beneficial for transfer printing in which arrays of metal/ferroelectric/metal micro-capacitors are developed over a large area with well defined edge sharpness. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Lawrence Suchow, Norman R. Stemple
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997