K. Keiji Kanazawa, A. Diaz, et al.
Synthetic Metals
Rectifying barriers of undoped and lightly doped trans-(CH)x films with low work function metals have been investigated. I-V and C-V measurements were used to explore the junction properties. The junction characteristics were found to be Schottky-like in the large sense accompanied by significant differences in detail. Using C-V measurements to determine the carrier concentration, we found the carrier mobility to be concentration dependent.
K. Keiji Kanazawa, A. Diaz, et al.
Synthetic Metals
P.M. Grant, J.C. Suits
Applied Physics Letters
W.D. Gill, G.Bryan Street
Journal of Non-Crystalline Solids
E.M. Engler, V.Y. Lee, et al.
JACS