R. Ghez, M.B. Small
JES
We have used photoluminescence from nonequilibrium electrons recombining at neutral acceptors to quantitatively measure hot electron kinetics in GaAs. Values have been obtained for intervalley scattering rates as a function of electron kinetic energy and the scattering rate of a single nonequilibrium electron in the presence of a sea of thermalized carriers. These measurements demonstrate the power of this new probe of nonequilibrium carrier relaxation in direct gap semiconductors. © 1989.
R. Ghez, M.B. Small
JES
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.W. Gammon, E. Courtens, et al.
Physical Review B