Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
In a quantizing magnetic field, the resistance value of a two-dimensional electron gas between any well-resolved magnetic levels in any open geometry is given by multiple fractions of he2. Measurements in various geometrical configurations of Si(100) (metal-oxide-semiconductor) transistor yield a well-defined and accurate plateau of these values. © 1983 The American Physical Society.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Mark W. Dowley
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