Conference paper
Si/SiGe CMOS: Can it extend the lifetime of Si?
K. Ismail
ISSCC 1997
Ballistic constrictions are fabricated on a high-mobility Si/SiGe strained-layer heterostructure which exhibit conductance quantization in units of 4e2/h at T=4.2K. Under finite drain voltage a half-plateau develops at 2e2/h and a series of oscillations appear which enable us to extract the energy separation ΔEN+1,N between successive one-dimensional subbands. The result is ΔE2,1=2.0meV and ΔE3,2=1.4meV. © 2002 American Institute of Physics.
K. Ismail
ISSCC 1997
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Applied Physics Letters
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