S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
We present a novel metal gate/high-k complementary metal-oxide-semiconductor (CMOS) integration scheme with symmetric and low threshold voltage (Vth) for both n-channel (nMOSFET) and p-channel (pMOSFET) metal-oxide-semiconductor field-effect transistors. The workfunction of pMOSFET is modulated by oxygen in-diffusion ('oxygenation') through the titanium nitride metal gate without equivalent oxide thickness (EOT) degradation. A significant Vth improvement by 420 mV and an aggressively scaled capacitance equivalent thickness under channel inversion (Tinv) of 1.3 nm is achieved for the pFET by using a replacement process in conjunction with optimized oxygenation process. Immunity of nMOSFET against oxygenation process is demonstrated. © 2009 Elsevier B.V. All rights reserved.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J. Tersoff
Applied Surface Science
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering