Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Self-consistent solutions for quasi-one-dimensional electron states in a narrow inversion layer channel at a GaAs/AlGaAs heterointerface have been obtained for a structure with a split gate. A simple model for fixed charge at the exposed surface in the gate opening has been used in the calculation. Energy levels for lateral motion are separated by ∼1-5 meV for the example considered, with a 0.4 μm gate opening. © 1987.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Hiroshi Ito, Reinhold Schwalm
JES
Kigook Song, Robert D. Miller, et al.
Macromolecules