S.S. Jha, J.R. Kirtley, et al.
Physical Review B
Paper
Raman spectroscopy of CySi1-y alloys grown by molecular beam epitaxy
Abstract
Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1-y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y<2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm-1.
Related
J.C. Tsang, J.E. Demuth, et al.
Chemical Physics Letters
J.E. Smith Jr., J.C. Tsang, et al.
Solid State Communications
R. Ulbrich, J.A. Kash, et al.
Physical Review Letters