J.A. Barker, D. Henderson, et al.
Molecular Physics
Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p-n junction. © 2006 American Chemical Society.
J.A. Barker, D. Henderson, et al.
Molecular Physics
R. Ghez, M.B. Small
JES
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021