Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Paper
Recovery study of negative bias temperature instability
Abstract
In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage (Vs), stressing temperature and stressing time (ts) are shown. © 2009 Elsevier B.V. All rights reserved.
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