M.I. Nathan, P.M. Mooney, et al.
Surface Science
We report on the first realization of extremely low resistivity regrown ohmic contacts to a variety of GaAs/AlGaAs structures using selective epitaxy. For planar regrown n+-GaAs contacts to n-GaAs we have obtained contact resistivity values ∼1×10-7 Ω cm2, and ∼1×10-8 Ω cm 2 for lateral contacts to a 10-nm-thick buried n+-GaAs layer. The contact resistances were substantially temperature independent from 77 to 300 K. Regrown contacts to a 2DEG structure exhibited a much higher and temperature-dependent contact resisitivity which could be accounted for (according to numerical simulation) by ∼5×1012 cm-2 traps at the AlGaAs/ regrown GaAs interface. Post-growth annealing of the regrown annealing of the regrown interface drastically reduced the value of contact resistivity for 2DEG structures to ∼2×10-8 Ω cm2.
M.I. Nathan, P.M. Mooney, et al.
Surface Science
K.W. Guarini, P. Solomon, et al.
Technical Digest-International Electron Devices Meeting
R. Venkatasubramanian, S.K. Ghandhi, et al.
Journal of Crystal Growth
P. Solomon
Physica E: Low-Dimensional Systems and Nanostructures