G. Katsaros, M. Stoffel, et al.
Applied Physics Letters
Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at ≲350°C. We find that, although conventional relaxation (i.e., via glide of 60°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.© 1995 American Institute of Physics.
G. Katsaros, M. Stoffel, et al.
Applied Physics Letters
J. Tersoff
Physical Review Letters
B.J. Kim, J. Tersoff, et al.
Physical Review Letters
J. Tersoff
ICDS 1995