J. Tersoff
Physical Review Letters
Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at ≲350°C. We find that, although conventional relaxation (i.e., via glide of 60°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.© 1995 American Institute of Physics.
J. Tersoff
Physical Review Letters
J. Tersoff
Physical Review Letters
J.B. Hannon, F.-J. Meyer zu Heringdorf, et al.
Physical Review Letters
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IBM J. Res. Dev