Marco Bellini, Bongim Jun, et al.
IEEE TNS
A comprehensive investigation of reliability issues in both fully-depleted and partially-depleted SiGe HBTs-on-SOI is presented. The devices were subjected to "mixed-mode" stress at 300 K and at 77 K, and we have analyzed the changes in base current IB, collector resistance Rc, M-1, and AC performance. A comparison of mixed-mode stress to conventional reverse EB bias stress is also made, and significant differences are observed. The thermal resistance Rth of the devices is extracted over the 50 K - 300 K range. © 2006 IEEE.
Marco Bellini, Bongim Jun, et al.
IEEE TNS
Jiahui Yuan, John D. Cressler, et al.
IEEE Transactions on Electron Devices
Tianbing Chen, Akil K. Sutton, et al.
IEEE TNS
Marco Bellini, John D. Cressler, et al.
BCTM 2007