PaperPartial-SOI Isolation Structure for Reduced Bipolar Transistor ParasiticsJoachim N. Burghartz, John D. Cressler, et al.IEEE Electron Device Letters
Paper73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon EmittersEmmanuel F. Crabbé, James H. Comfort, et al.IEEE Electron Device Letters
PaperSub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar TransistorsJohn D. Cressler, James H. Comfort, et al.IEEE Electron Device Letters
PaperElectroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphideErnesto H. Perea, Emilio E. Mendez, et al.Applied Physics Letters
