Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined. © 1986 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Michiel Sprik
Journal of Physics Condensed Matter