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APS Global Physics Summit 2025
MOSFET samples were fabricated with Na+ ions in the gate oxide. Large peaks in the tunneling conductivity through the oxide were observed which are interpreted as resonant tunneling of electrons via the localized Na+ impurities. The localized sites are believed to arise from Na+ decoration of intrinsic defects in the oxide. © 1986.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
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Physica E: Low-Dimensional Systems and Nanostructures
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SPIE Advanced Lithography 2007
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