B. Laikhtman, P. Solomon
Journal of Applied Physics
SISFETs were characterized at both room and liquid nitrogen (LN) temperatures to evaluate their dynamic performance. Equivalent circuit parameters obtained from low-frequency parametric measurements were compared to those deduced from S-parameter measurements. The measurements were made on a bifurcated gate structure consisting of two identical gate fingers totaling 70 μm in width. Microwave characterization of the devices relied on measurement of the S-parameters over a 50-MHz-26-GHz range using an HP8510B network analyzer and cascade probes. The room- and LN-temperature characterization of SISFETs shows no evidence of anomalous behavior. The equivalent circuit parameters deduced from microwave measurements are consistent with those derived from the low-frequency measurements. The low gate leakage, improved gm, and unchanged gate capacitance result in a high fT at LN temperatures, indicating potential for enhanced performance in digital systems.
B. Laikhtman, P. Solomon
Journal of Applied Physics
J.A. Kash, F.E. Doany, et al.
OFC/NFOEC 2006
G.M. Cohen, C. Cabral Jr., et al.
MRS Proceedings 2001
D.J. Frank, P. Solomon
ISLPED 1995