P.S. Ho, M. Liehr, et al.
Surface Science
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
P.S. Ho, M. Liehr, et al.
Surface Science
P.W. Li, H.K. Liou, et al.
Applied Physics Letters
E.S. Yang, J.M. Brownlow
Journal of Applied Physics
D.A. Herman Jr., J.C. Deluca, et al.
Journal of Applied Physics