Q.Y. Ma, T.J. Licata, et al.
Applied Physics Letters
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Q.Y. Ma, T.J. Licata, et al.
Applied Physics Letters
Ulf Gennser, V.P. Kesan, et al.
Physical Review Letters
Q.Y. Ma, Chin-An Chang, et al.
Journal of Applied Physics
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989