Q.Y. Ma, E.S. Yang, et al.
Journal of Electronic Materials
Paper
Schottky barrier formation by laser irradiation processing
Abstract
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Related
Q.Y. Ma, Chin-An Chang, et al.
Journal of Applied Physics
E.S. Yang, Q.H. Hua, et al.
Applied Physics Letters
E.S. Yang, J.M. Brownlow
Journal of Applied Physics