1 / f noise in magnetite films
B. Raquet, J.M.D. Coey, et al.
Journal of Applied Physics
Consequences of the splitting of the electronic levels in a dilute magnetic semiconductor have been observed by measuring the capacitance of a simple Schottky barrier at 4.2 K in the presence of magnetic fields up to 60 kOe. The material used was a single crystal of degenerately Ga-doped Cd 1-xMnxSe. The variation of the diffusion potential in the semiconductor as a function of magnetic field was deduced from C(V) measurements at 1 MHz. By assuming the presence of an interfacial layer at the metal/semiconductor interface, the derived band conduction splitting is in relatively good agreement with that calculated by using the magneto-optical properties of the material.
B. Raquet, J.M.D. Coey, et al.
Journal of Applied Physics
S. Von Molnár, T. Kasuya
Physical Review Letters
G. Couturier, D. Kaiser, et al.
Physical Review B
I. Terry, S. Von Molnár, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties