A. Moser, E.-E. Latta, et al.
Applied Physics Letters
The characteristics of Schottky diodes on n-GaAs fabricated after an in situ low-pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160-240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.
A. Moser, E.-E. Latta, et al.
Applied Physics Letters
J.H. Magerlein, D.J. Webb, et al.
Journal of Applied Physics
A.C. Callegari, M. Murakami, et al.
ESSDERC 1987
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting