Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The details of the initial relaxation of optically injected hot carriers in polar semiconductors are studied by Raman scattering from nonequilibrium LO phonons and anti-Stokes hot luminescence. Experiments on intrinsic and doped GaAs reveal carrier-phonon and carrier-carrier interaction times, the wavevector dependence of the hot phonon distribution, and the influence of holes on the LO phonon lifetime. Studies in AlxGa1-xAs probe the influence of alloy disorder on the generation of hot phonons. In addition, because there are two optic phonon modes in AlxGa1-xAs, we can experimentally measure the effect of ionicity (the frequency difference between LO and TO phonons) on the generation rate for the hot phonons. © 1988.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
K.N. Tu
Materials Science and Engineering: A
E. Burstein
Ferroelectrics