J.N. Burghartz, J. Warnock, et al.
Electronics Letters
The first bipolar transistor using selective epitaxy for base formation in a double-poly self-aligned structure is presented. The intrinsic base was formed by a selective-epitaxial deposition in place of ion implantation. Such epitaxial base processes are capable of achieving a narrow intrinsic base width and a high Gummel number which will lower the pinched intrinsic base sheet resistance Rbi and base-emitter diffusion capacitance C^ compared to advanced ion-implanted processes. A selective epitaxial base can be simply introduced in advanced double-poly self-aligned processes compared to a nonselective epitaxial layer. © 1988 IEEE
J.N. Burghartz, J. Warnock, et al.
Electronics Letters
E.A. Irene, E. Tierney, et al.
JES
J.N. Burghartz, A.O. Cifuentes, et al.
VLSI Technology 1993
J.N. Burghartz, S. Mader, et al.
IEDM 1989