PaperEffect of deep levels on the optical and electrical properties of copper-doped GaAs p-n junctionsT.N. Morgan, M.H. Pilkuhn, et al.Physical Review
PaperElectroluminescence near band gap in gallium phosphide containing shallow donor and acceptor levelsL.M. Foster, M.H. PilkuhnApplied Physics Letters
PaperThe Effect of Deep Levels due to Copper on the Optical and Electrical Properties of GaAs p-n JunctionsM.H. Pilkuhn, H. RupprechtIEEE T-ED
PaperContinuous Stimulated Emission from GaAs Diodes at 77°KM.H. Pilkuhn, H. Rupprecht, et al.Proceedings of the IEEE
