M.G. Miksic, G. Mandel, et al.
Physics Letters
We present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000°C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies.
M.G. Miksic, G. Mandel, et al.
Physics Letters
R.S. Title, G. Mandel, et al.
Physical Review
F.F. Morehead
Journal of Materials Research
B.L. Crowder, F.F. Morehead
IEEE T-ED